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HiPerFET TM
Power MOSFETs
Q-CLASS
IXFK 24N90Q
IXFX 24N90Q
V DSS
I D25
R DS(on)
=
=
=
900 V
24 A
0.45 W
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Qg,
High dV/dt, Low t rr
Preliminary data sheet
t rr ￡ 250 ns
PLUS 247 TM (IXFX)
Symbol
Test Conditions
Maximum Ratings
G
D
(TAB)
V DSS
V DGR
V GS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M W
Continuous
Transient
900
900
± 20
± 30
V
V
V
V
TO-264 AA (IXFK)
I D25
I DM
I AR
E AR
E AS
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
24
96
24
60
2.5
A
A
A
mJ
J
G = Gate
S = Source
G
D
S
D = Drain
TAB = Drain
(TAB)
IXYS advanced low Q g process
Low gate charge and capacitances
International standard packages
Low R DS (on)
Rated for unclamped Inductive load
Molding epoxies meet UL 94 V-0
dv/dt
P D
T J
T JM
T stg
T L
M d
Weight
I S ￡ I DM , di/dt ￡ 100 A/ m s, V DD ￡ V DSS
T J ￡ 150 ° C, R G = 2 W
T C = 25 ° C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
5
500
-55 ... +150
150
-55 ... +150
300
0.4/6
V/ns
W
° C
° C
° C
° C
Nm/lb.in.
6 g
10 g
Features
l
l
- easier to drive
- faster switching
l
l
l
switching (UIS)
rated
l
flammability classification
Applications
Symbol
V DSS
Test Conditions
V GS = 0 V, I D = 250uA
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
900 V
l
l
l
l
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
V GS(th)
I GSS
V DS = V GS , I D = 4mA
V GS = ± 20 V, V DS = 0
2.5
4.5 V
± 100 nA
l
l
AC motor control
Temperature and lighting controls
PLUS 247 TM package for clip or spring
Space savings
I DSS
R DS(on)
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = 0.5 ? I D25
Note 1
T J = 125 ° C
100 m A
2 mA
0.45 W
Advantages
l
mounting
l
l
High power density
? 2000 IXYS All rights reserved
98679B (08/00)
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相关代理商/技术参数
IXFK250N10P 功能描述:MOSFET Polar Power MOSFET HiPerFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK25N80 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFETTM Power MOSFETs
IXFK25N90 功能描述:MOSFET 25 Amps 900V 0.33 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK260N17T 功能描述:MOSFET 260A 170V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK26N100P 功能描述:MOSFET 26 Amps 1000V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK26N120P 功能描述:MOSFET 26 Amps 1200V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK26N60Q 功能描述:MOSFET 28 Amps 600V 0.25 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK26N90 功能描述:MOSFET 26 Amps 900V 0.3 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube